High Inversion Current in Silicon Nanowire Field Effect Transistors-Reference-Cited by-同舟云学术

High Inversion Current in Silicon Nanowire Field Effect Transistors

Published:2004-09-30 Issue:11 Volume:4 Page:2197-2201
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Koo Sang-Mo¹,Fujiwara Akira¹,Han Jin-Ping¹,Vogel Eric M.¹,Richter Curt A.¹,Bonevich John E.¹

Affiliation:

1. Semiconductor Electronics Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, NTT Basic Research Laboratories, NTT Corporation, Atusugi, Kanagawa 243-0198, Japan, and Metallurgy Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl0486517

Reference22 articles.

1. Organic-functionalized molecular sieves as shape-selective catalysts

2. Ambipolar Electrical Transport in Semiconducting Single-Wall Carbon Nanotubes

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