Tuning the Electronic and Magnetic Properties of Phosphorene by Vacancies and Adatoms-Reference-Cited by-同舟云学术

Tuning the Electronic and Magnetic Properties of Phosphorene by Vacancies and Adatoms

Published:2015-03-17 Issue:12 Volume:119 Page:6530-6538
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Srivastava Pooja¹,Hembram K. P. S. S.¹,Mizuseki Hiroshi¹,Lee Kwang-Ryeol¹,Han Sang Soo¹,Kim Seungchul¹

Affiliation:

1. Computational Science Research Center, Korea Institute of Science and Technology (KIST), Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136-791, Republic of Korea

Funder

Ministry of Trade, Industry and Energy

Korea Institute of Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp5110938

Reference57 articles.

1. Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility

2. Black phosphorus field-effect transistors

3. Electric field effect in ultrathin black phosphorus

4. Black Phosphorus–Monolayer MoS2 van der Waals Heterojunction p–n Diode

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