Electrolyte-Gated, High Mobility Inorganic Oxide Transistors from Printed Metal Halides-Reference-Cited by-同舟云学术

Electrolyte-Gated, High Mobility Inorganic Oxide Transistors from Printed Metal Halides

Published:2013-11-18 Issue:22 Volume:5 Page:11498-11502
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Garlapati Suresh Kumar¹²,Mishra Nilesha¹,Dehm Simone¹,Hahn Ramona¹,Kruk Robert¹,Hahn Horst¹²³,Dasgupta Subho¹

Affiliation:

1. Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), D-76344 Eggenstein-Leopoldshafen, Germany

2. Center for Functional Nanostructures (CFN), Karlsruhe Institute of Technology (KIT), Wolfgang-Gaede-Strasse 1a, 76131 Karlsruhe, Germany

3. KIT-TUD Joint Research Laboratory Nanomaterials, Institute of Materials Science, Technische Universität Darmstadt (TUD), Petersenstrasse 32, D-64287 Darmstadt, Germany

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am403131j

Reference29 articles.

1. Low-Temperature, Solution-Processed and Alkali Metal Doped ZnO for High-Performance Thin-Film Transistors

2. Low-temperature fabrication of high-performance metal oxide thin-film electronics via combustion processing

3. Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

4. Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

5. A General Route to Printable High-Mobility Transparent Amorphous Oxide Semiconductors

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