Chemical Vapor Deposition of NbS2 from a Chloride Source with H2 Flow: Orientation Control of Ultrathin Crystals Directly Grown on SiO2/Si Substrate and Charge Density Wave Transition-Reference-Cited by-同舟云学术

Chemical Vapor Deposition of NbS2 from a Chloride Source with H2 Flow: Orientation Control of Ultrathin Crystals Directly Grown on SiO2/Si Substrate and Charge Density Wave Transition

Published:2016-06-30 Issue:8 Volume:16 Page:4467-4472
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Yanase Takashi¹,Watanabe Sho¹,Weng Mengting¹,Wakeshima Makoto²,Hinatsu Yukio²,Nagahama Taro¹,Shimada Toshihiro¹³

Affiliation:

1. Division of Applied Chemistry, Faculty of Engineering, Hokkaido University, Kita 13 Nishi 8 Kita-ku, Sapporo 060-8628, Japan

2. Department of Chemistry, Faculty of Science, Hokkaido University, Kita 8 Nishi 5 Kita-ku, Sapporo 060-0808, Japan

3. CREST, Japan Science and Technology Agency (JST), 4-1-8 Honcho, Kawaguchi 332-0012, Japan

Funder

Ministry of Education, Culture, Sports, Science, and Technology

Japan Science and Technology Agency

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.6b00601

Reference49 articles.

1. A roadmap for graphene

2. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

3. The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties

4. Two-dimensional atomic crystals

5. High Performance Multilayer MoS2 Transistors with Scandium Contacts

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