Hexagonal Ge Grown by Molecular Beam Epitaxy on Self-Assisted GaAs Nanowires-Reference-Cited by-同舟云学术

Hexagonal Ge Grown by Molecular Beam Epitaxy on Self-Assisted GaAs Nanowires

Published:2021-11-24 Issue:1 Volume:22 Page:32-36
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Dudko Iuliia¹²³,Dursap Thomas¹,Lamirand Anne D.¹,Botella Claude¹,Regreny Philippe¹,Danescu Alexandre¹,Brottet Solène¹,Bugnet Matthieu⁴^ORCID,Walia Sumeet²³^ORCID,Chauvin Nicolas¹,Penuelas José¹^ORCID

Affiliation:

1. Université Lyon, Ecole Centrale de Lyon, CNRS, INSA Lyon, Université Claude Bernard Lyon 1, CPE Lyon, INL, UMR 5270, 69130 Ecully, France

2. School of Engineering, RMIT University, Melbourne 3001, Victoria Australia

3. Functional Materials and Microsystems, Research Group and Micro Nano Research Facility, RMIT University, Melbourne 3001, Victoria Australia

4. Université Lyon, CNRS, INSA Lyon, UCBL, MATEIS, UMR 5510, 69621 Villeurbanne, France

Funder

Agence Nationale de la Recherche

H2020 Marie Sk??odowska-Curie Actions

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.1c00945

Reference27 articles.

1. Direct-bandgap emission from hexagonal Ge and SiGe alloys

2. Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and SixGe1–x Alloys in Nanowires by Raman Spectroscopy

3. Group IV Direct Band Gap Photonics: Methods, Challenges, and Opportunities

4. Silicon chips lighten up

5. Properties of hexagonal polytypes of group-IV elements from first-principles calculations

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