Interface-Driven Phase Transition of Phase-Change Material-Reference-Cited by-同舟云学术

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Interface-Driven Phase Transition of Phase-Change Material

Published:2019-02-15 Issue:4 Volume:19 Page:2123-2130
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Choi Minho¹,Choi Heechae²,Ahn Jinho³,Kim Yong Tae¹^ORCID

Affiliation:

1. Semiconductor Materials and Device Laboratory, Korea Institute of Science and Technology, Hwarang-ro 14-gil 5, Seongbuk-gu, Seoul 02792, Korea

2. Institute of Inorganic Chemistry, University of Cologne, Greinstrasse 6, Cologne 50939, Germany

3. Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul 04763, Korea

Funder

Deutscher Akademischer Austauschdienst

Korea Institute of Science and Technology

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.8b01690

Reference59 articles.

1. Towards a universal memory?

2. Phase-change materials for rewriteable data storage

3. Memory leads the way to better computing

4. Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes

5. Phase diagram of the ternary system Ge-Sb-Te

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1. Cylindrical laser beams for a-Ge2Sb2Te5 thin film modification;Journal of Non-Crystalline Solids;2024-06

2. Crystallinity swayed phase transformation and oxygen vacancy formation in TiO2 aerogel photocatalysts;Environmental Research;2023-12

3. Research on bending and low resistance drift behavior of In2Se3/Sb composite multilayer films based on flexible substrates;Journal of Materials Research and Technology;2023-11

4. Mechanical characterization and properties of continuous wave laser irradiated Ge2Sb2Te5 stripes;Materials & Design;2021-04

5. Material design for Ge2Sb2Te5 phase-change material with thermal stability and lattice distortion;Scripta Materialia;2019-09

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