Room Temperature Synthesis of Tellurium by Solution Atomic Layer Deposition-Reference-Cited by-同舟云学术

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Room Temperature Synthesis of Tellurium by Solution Atomic Layer Deposition

Published:2024-09-10 Issue: Volume: Page:
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Willkommen Jessica¹,Bahrami Amin¹^ORCID,Rodriguez Nicolas Perez¹,Wrzesinska-Lashkova Angelika¹²,Vaynzof Yana¹²^ORCID,Nielsch Kornelius¹³^ORCID,Lehmann Sebastian¹^ORCID

Affiliation:

1. Leibniz Institute for Solid State and Materials Research, Helmholtzstraße 20, 01069 Dresden, Germany

2. Chair for Emerging Electronic Technologies, TUD Dresden University of Technology, Nöthnitzer Str. 61, 01187 Dresden, Germany

3. Institute of Materials Science, Technische Universität Dresden, Helmholtzstraße 7, 01062 Dresden, Germany

Funder

Deutsche Forschungsgemeinschaft

H2020 European Research Council

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.4c00987

Reference19 articles.

1. Current State‐of‐the‐Art in the Interface/Surface Modification of Thermoelectric Materials

2. Water-Free SbOx ALD Process for Coating Bi2Te3 Particles

3. Phase-engineered synthesis of atomically thin te single crystals with high on-state currents

4. Tellurium Single‐Crystal Arrays by Low‐Temperature Evaporation and Crystallization

5. Superconductivity and critical fields of tellurium single crystal under high pressure

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