Formation of Crystallographically Oriented Metastable Mg1.8Si in Mg Ion-Implanted Si-Reference-Cited by-同舟云学术

Formation of Crystallographically Oriented Metastable Mg1.8Si in Mg Ion-Implanted Si

Published:2019-10-22 Issue:12 Volume:19 Page:7138-7142
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Kobayashi Yuki¹,Naito Muneyuki¹^ORCID,Sudoh Koichi²,Gentils Aurélie³,Bachelet Cyril³,Bourçois Jérôme³

Affiliation:

1. Department of Chemistry, Konan University, Okamoto, Higashinada, Kobe, Hyogo 658-8501, Japan

2. The Institute of Scientific and Industrial Research, Osaka University, Mihogaoka, Ibaraki, Osaka 567-0047, Japan

3. Centre de Sciences Nucléaires et de Sciences de la Matière, Université Paris-Sud and CNRS-IN2P3, Université Paris-Saclay, 91405 Orsay Campus, France

Funder

Core Research for Evolutional Science and Technology

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.9b01002

Reference25 articles.

1. SemiconductingMg2Si thin films prepared by molecular-beam epitaxy

2. Structure Determination of Mg 5 Si 6 Particles in Al by Dynamic Electron Diffraction Studies

3. Epitaxial orientation of Mg2Si(110) thin film on Si(111) substrate

4. High throughput density functional investigations of the stability, electronic structure and thermoelectric properties of binary silicides

5. Pressure-stabilized binary compounds of magnesium and silicon

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