Growth of Pentacene-Doped p-Terphenyl Crystals by Vertical Bridgman Technique and Doping Effect on Their Characterization-Reference-Cited by-同舟云学术

Growth of Pentacene-Doped p-Terphenyl Crystals by Vertical Bridgman Technique and Doping Effect on Their Characterization

Published:2017-04-17 Issue:5 Volume:17 Page:2473-2477
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Ai Qing¹²^ORCID,Chen Peifeng¹,Feng Yuxiang¹,Xu Yebin¹^ORCID

Affiliation:

1. School of Optical and Electronic Information, Huazhong University of Science and Technology, Luoyu Road No. 1037, Wuhan, Hubei, 430074, People’s Republic of China

2. School of Electrical and Electronic Information Engineering, Hubei Polytechnic University, North Guilin Road No. 16, Huangshi, Hubei, 435003, People’s Republic of China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.6b01900

Reference28 articles.

1. Effect of annealing on Bridgman grown organic scintillation material of trans-stilbene

2. Enhanced energy resolution (22Na, 137Cs and 241Am) and alpha–gamma (241Am + 60Co) and neutron–gamma (241Am–Be) pulse shape discrimination properties of p-terphenyl crystals prepared by modified selective self-seeded vertical Bridgman technique (SSVBT)

3. Room-temperature solid-state maser