New Insights into the Mechanism for Growing Cubic Boron Nitride Crystals under High Pressure-Reference-Cited by-同舟云学术

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New Insights into the Mechanism for Growing Cubic Boron Nitride Crystals under High Pressure

Published:2024-06-01 Issue:12 Volume:24 Page:5089-5096
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Han Yunxia¹^ORCID,Ma Dejiang¹,Gu Chao¹²,Fu Yu¹,Zhao Yusheng¹³,Wang Shanmin¹²^ORCID

Affiliation:

1. Department of Physics, Southern University of Science and Technology, Shenzhen, Guangdong 518055, China

2. Quantum Science Center of Guangdong-Hongkong-Macao Greater Bay Area, Shenzhen, Guangdong 518045, China

3. College of Science, Eastern Institute of Technology, Ningbo, Zhejiang 315200, China

Funder

Shenzhen Fundamental Research Program

National Natural Science Foundation of China

Basic and Applied Basic Research Foundation of Guangdong Province

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.4c00313

Reference53 articles.

1. Modeling hardness of polycrystalline materials and bulk metallic glasses

2. High-quality heterojunction between p-type diamond single-crystal film and n-type cubic boron nitride bulk single crystal

3. Ultraviolet light emission from self-organized p–n domains in cubic boron nitride bulk single crystals grown under high pressure

4. Crystal growth of cubic boron nitride by temperature difference method at ∼55 kbar and ∼1800 °C

5. Ultraviolet light‐emitting diode of a cubic boron nitridepnjunction made at high pressure

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