Influence of Dopant Uniformity on Electron Transport in CuxBi2Se3 Films-Reference-Cited by-同舟云学术

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Influence of Dopant Uniformity on Electron Transport in CuxBi2Se3 Films

Published:2020-12-22 Issue:1 Volume:21 Page:608-616
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Han Dan¹²,Wang Zhenhua¹²^ORCID,Gao Xuan P. A.³,Zhang Zhidong¹²

Affiliation:

1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, People’s Republic of China

2. School of Materials Science and Engineering, University of Science and Technology of China, 72 Wenhua Road, Shenyang 110016, People’s Republic of China

3. Department of Physics, Case Western Reserve University, Cleveland, Ohio 44106, United States

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

National Laboratory for Materials Science

Foundation of National Laboratory for Materials Science

United Foundation of Liaoning Province

Liaoning Revitalization Talents Program

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.0c01418

Reference44 articles.

1. Topological materials

2. The quantum spin Hall effect and topological insulators

3. The birth of topological insulators

4. Bulk Fermi surface coexistence with Dirac surface state inBi2Se3: A comparison of photoemission and Shubnikov–de Haas measurements

5. Selective scattering between Floquet–Bloch and Volkov states in a topological insulator

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1. Effect of gallium doping on structural and transport properties of the topological insulator Bi₂Se₃ grown by molecular beam epitaxy;Journal of Applied Physics;2022-09-21

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