Characterization of V-Shaped Defects Formed during the 4H-SiC Solution Growth by Transmission Electron Microscopy and X-ray Topography Analysis-Reference-Cited by-同舟云学术

Characterization of V-Shaped Defects Formed during the 4H-SiC Solution Growth by Transmission Electron Microscopy and X-ray Topography Analysis

Published:2016-08-08 Issue:9 Volume:16 Page:5136-5140
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Xiao Shiyu¹,Harada Shunta¹²,Murayama Kenta²,Ujihara Toru¹²

Affiliation:

1. Department of Materials Science and Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

2. Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.6b00711

Reference23 articles.

1. Step-controlled epitaxial growth of SiC: High quality homoepitaxy

2. Structure of the carrot defect in 4H-SiC epitaxial layers

3. Characterization of comet-shaped defects on C-face 4H-SiC epitaxial wafers by electron microscopy

4. Degradation of hexagonal silicon-carbide-based bipolar devices

5. Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers

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