Centimeter-Scale Synthesis of Monolayer WS<sub>2</sub> Using Single-Zone Atmospheric-Pressure Chemical Vapor Deposition: A Detailed Study of Parametric Dependence, Growth Mechanism, and Photodetector Properties-Reference-Cited by-同舟云学术

Centimeter-Scale Synthesis of Monolayer WS₂ Using Single-Zone Atmospheric-Pressure Chemical Vapor Deposition: A Detailed Study of Parametric Dependence, Growth Mechanism, and Photodetector Properties

Published:2022-04-18 Issue:5 Volume:22 Page:3206-3217
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Aggarwal Pallavi¹²^ORCID,Kaushik Shuchi¹^ORCID,Bisht Prashant²,Sharma Madan¹,Singh Aditya¹^ORCID,Mehta Bodh Raj²³^ORCID,Singh Rajendra¹⁴^ORCID

Affiliation:

1. Advanced Semiconductor Materials and Devices Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India

2. Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India

3. Directorate of Research, Innovation and Development, Jaypee Institute of Information Technology, Noida, U.P. 201309, India

4. Nanoscale Research Facility, Indian Institute of Technology Delhi, New Delhi 110016, India

Funder

University Grants Commission

Indian Institute of Technology Delhi

Ministry of Human Resource Development

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.2c00049

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5. A role for graphene in silicon-based semiconductor devices

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