Formation of Uniquely Oriented VO2 Thin Films by Topotactic Oxidation of V2O3 Epitaxial Films on R-Plane Al2O3
Author:
Affiliation:
1. Graduate School of Energy Science, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-8501, Japan
Funder
Japan Science and Technology Agency
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.2c00042
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1. Recent Progress on Vanadium Dioxide Nanostructures and Devices: Fabrication, Properties, Applications and Perspectives
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3. Accurate X-ray determination of the lattice parameters and the thermal expansion coefficients of VO2near the transition temperature
4. Wafer-scale growth of VO2 thin films using a combinatorial approach
5. Optical and transport properties of high quality crystals of V2O4 near the metallic transition temperature
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2. Tailoring Epitaxial VO2 Thin Films with Tunable Properties via Spray Pyrolysis;The Journal of Physical Chemistry C;2023-12-13
3. Topotactic Transition: A Promising Opportunity for Creating New Oxides;Advanced Functional Materials;2023-06-15
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