Metal–Organic Chemical Vapor Deposition of ZnGeGa2N4-Reference-Cited by-同舟云学术

Metal–Organic Chemical Vapor Deposition of ZnGeGa2N4

Published:2019-11-27 Issue:1 Volume:20 Page:189-196
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Jayatunga Benthara Hewage Dinushi¹,Karim Md Rezaul²^ORCID,Lalk Rebecca A.¹,Ohanaka Okey¹,Lambrecht Walter R. L.¹,Zhao Hongping²³^ORCID,Kash Kathleen¹^ORCID

Affiliation:

1. Department of Physics, Case Western Reserve University, 10900 Euclid Avenue, Cleveland, Ohio 44106-7079, United States

2. Department of Electrical and Computer Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, Ohio 43210, United States

3. Department of Materials Science and Engineering, The Ohio State University, 2015 Neil Avenue, Columbus, Ohio 43210, United States

Funder

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.9b00995

Reference32 articles.

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2. Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis

3. A map of the inorganic ternary metal nitrides

4. Lambrecht, W. R. L.; Punya, A. In III-Nitride Semiconductors and their Modern Devices; Gill, B., Ed. Oxford University Press: Oxford, 2013; Chapter 15, pp 519–585.

5. Band offsets between ZnGeN2, GaN, ZnO, and ZnSnN2and their potential impact for solar cells

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