Parameter Space for Chemical Vapor Deposition Graphene in Cold-Wall Reactors under High Precursor Flow Rate-Reference-Cited by-同舟云学术

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Parameter Space for Chemical Vapor Deposition Graphene in Cold-Wall Reactors under High Precursor Flow Rate

Published:2023-08-16 Issue:9 Volume:23 Page:6349-6358
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Boscá Alberto¹²^ORCID,Ladrón-de-Guevara Antonio¹²^ORCID,Pedros Jorge¹²,Martínez Javier¹³^ORCID,Fandan Rajveer¹²^ORCID,Calle Fernando¹²

Affiliation:

1. Instituto de Sistemas Optoelectrónicos y Microtecnología, Universidad Politécnica de Madrid, Madrid 28040, Spain

2. Dpto. de Ingeniería Electrónica, E.T.S.I de Telecomunicación, Universidad Politécnica de Madrid, Madrid 28040, Spain

3. Dpto. de Ciencia de Materiales, E.T.S.I de Caminos, Canales y Puertos, Universidad Politécnica de Madrid, Madrid 28040, Spain

Funder

Comunidad de Madrid

Ministerio de Ciencia e Innovación

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00258

Reference41 articles.

1. Graphene Plasmonics: A Platform for 2D Optics

2. Graphene Plasmonics for Terahertz to Mid-Infrared Applications

3. Graphene photonics and optoelectronics

4. Graphene-based integrated photonics for next-generation datacom and telecom

5. Electronics based on two-dimensional materials

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