Growth and Characterization of CdTe Single Crystals Prepared by the “Liquinert Processed” Vertical Bridgman Method for Radiation Detectors-Reference-Cited by-同舟云学术

Growth and Characterization of CdTe Single Crystals Prepared by the “Liquinert Processed” Vertical Bridgman Method for Radiation Detectors

Published:2019-09-18 Issue:11 Volume:19 Page:6218-6223
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Sekine Ryotaro¹^ORCID,Uenomachi Mizuki²,Asafusa Hiroki¹,Tokiwa Kazuyasu¹,Shimazoe Kenji²,Takahashi Hiroyuki²,Harada Yoshiyuki³,Fujimoto Akira³,Hirai Takeshi⁴,Sakuragi Shiro⁵

Affiliation:

1. Department of Applied Electronics, Tokyo University of Science, Katsushika-ku, Tokyo 125-8585, Japan

2. Department of Nuclear Engineering and Management, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan

3. Department of General Education, Osaka Institute of Technology, Asahi-ku, Osaka 535-8585, Japan

4. College of Science and Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan

5. Union Materials Inc., Tone, Ibaraki 300-1640, Japan

Funder

Ampere Inc.

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.9b00706

Reference25 articles.

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4. Mullin, J. B. In CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications Part I: Physics, CdTe-based Nanostructures, CdTe-based Semimagnetic Semiconductors, Defects; Triboulet, R., Siffert, P., Eds. European Materials Research Society Series; Elsevier: Amsterdam, 2010; Chapter I, p 1.

5. Growth of high resistivity CdTe and (Cd,Zn)Te crystals

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