Three-Dimensional Diamond MPCVD Growth over MESA Structures: A Geometric Model for Growth Sector Configuration-Reference-Cited by-同舟云学术

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Three-Dimensional Diamond MPCVD Growth over MESA Structures: A Geometric Model for Growth Sector Configuration

Published:2018-11-12 Issue:12 Volume:18 Page:7628-7632
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Lloret Fernando¹²³^ORCID,Araújo Daniel³,Eon David⁴,Bustarret Etienne⁴

Affiliation:

1. Institute for Material Research, Hasselt University, 3590, Diepenbeek, Belgium

2. IMOMEC, IMEC vzw, 3590, Diepenbeek, Belgium

3. Dpto. Ciencia de los Materiales, Universidad de Cádiz, 11510 Puerto Real, Cádiz, Spain

4. Univ. Grenoble Alpes, CNRS, Institut Néel, 38000 Grenoble, France

Funder

H2020 Energy

Ministerio de Econom?a y Competitividad

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.8b01424

Reference25 articles.

1. Smaller, faster, tougher

2. Semiconductors for high‐voltage, vertical channel field‐effect transistors

3. Diamond–metal contacts: interface barriers and real-time characterization

4. Diamond bipolar junction transistor device with phosphorus-doped diamond base layer

5. Diamond Junction Field-Effect Transistors with Selectively Grown n$^{+}$-Side Gates

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1. Digital micro-photogrammetry in analysis and modeling habit and sectoral structure of real high-pressure high-temperature single-crystal diamonds;Review of Scientific Instruments;2022-03-01

2. Diamond for Electronics: Materials, Processing and Devices;Materials;2021-11-22

3. Selectively boron doped homoepitaxial diamond growth for power device applications;Applied Physics Letters;2021-01-11

4. Mechanical properties of high-crystalline diamond films grown via laser MPCVD;Diamond and Related Materials;2020-11

5. Homoepitaxy Growth of Single Crystal Diamond under 300 torr Pressure in the MPCVD System;Materials;2019-11-28

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