Epitaxial Growth of the BiySb2–yTe3–xSex 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Epitaxial Growth of the Bi_ySb_2–yTe_3–xSe_x 3D Topological Insulator: Physical Vapor Deposition and Molecular Beam Epitaxy

Published:2022-11-02 Issue:12 Volume:22 Page:7255-7263
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Stepina Natalia P.¹^ORCID,Ishchenko Denis V.¹,Golyashov Vladimir A.¹²^ORCID,Bazhenov Alexander O.¹,Goldyreva Ekaterina S.³,Akhundov Igor O.¹^ORCID,Tarasov Andrey S.¹,Kokh Konstantin A.³⁴^ORCID,Tereshchenko Oleg E.¹²

Affiliation:

1. Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090, Russia

2. Synchrotron Radiation Facility SKIF, Boreskov Institute of Catalysis SB RAS, Kol’tsovo 630559, Russia

3. Sobolev Institute of Geology and Mineralogy SB RAS, Novosibirsk 630090, Russia

4. Kemerovo State University, Kemerovo 650000, Russia

Funder

Russian Science Foundation

Government of the Novosibirsk Region

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.2c00906

Reference43 articles.

1. The Property, Preparation and Application of Topological Insulators: A Review

2. Transport in three-dimensional topological insulators: Theory and experiment

3. Topological insulators and superconductors

4. Colloquium: Topological insulators

5. Observation of a large-gap topological-insulator class with a single Dirac cone on the surface

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