Integral Monolayer-Scale Featured Digital-Alloyed AlN/GaN Superlattices Using Hierarchical Growth Units-Reference-Cited by-同舟云学术

Integral Monolayer-Scale Featured Digital-Alloyed AlN/GaN Superlattices Using Hierarchical Growth Units

Published:2019-01-30 Issue:3 Volume:19 Page:1720-1727
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Gao Na¹^ORCID,Feng Xiang¹,Lu Shiqiang¹,Lin Wei¹,Zhuang Qinqin²^ORCID,Chen Hangyang¹,Huang Kai¹,Li Shuping¹,Kang Junyong¹

Affiliation:

1. Department of Physics, OSED, Fujian Provincial Key Laboratory of Semiconductors Materials and Applications, Xiamen University, Xiamen 361005, P. R. China

2. Fujian Key Laboratory of Optoelectronic Technology and Devices, School of Opto-electronic and Communication Engineering, Xiamen University of Technology, Xiamen 361024, P. R. China

Funder

Ministry of Education of the People's Republic of China

Ministry of Science and Technology of the People's Republic of China

Natural Science Foundation of Fujian Province

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.8b01677

Reference27 articles.