Dissolved Intermediates in Ammonothermal Crystal Growth: Stepwise Condensation of [Ga(NH2)4]− toward GaN
Author:
Affiliation:
1. Institut für Anorganische Chemie, Universität Stuttgart, Pfaffenwaldring 55, 70569 Stuttgart, Germany
2. Lehrstuhl für Prozessmaschinen und Anlagentechnik, Friedrich-Alexander-Universität Erlangen-Nürnberg, Cauerstraße 4, 91058 Erlangen, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.7b00815
Reference48 articles.
1. Growth and applications of Group III-nitrides
2. Group-III-Nitride Based Gas Sensing Devices
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4. Technology of Gallium Nitride Crystal Growth
5. Substrates for gallium nitride epitaxy
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