A Nonvolatile Memory Device Made of a Ferroelectric Polymer Gate Nanodot and a Single-Walled Carbon Nanotube-Reference-Cited by-同舟云学术

A Nonvolatile Memory Device Made of a Ferroelectric Polymer Gate Nanodot and a Single-Walled Carbon Nanotube

Published:2010-11-04 Issue:12 Volume:4 Page:7315-7320
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Son Jong Yeog¹,Ryu Sangwoo¹,Park Yoon-Cheol¹,Lim Yun-Tak,Shin Yun-Sok¹,Shin Young-Han²,Jang Hyun Myung¹

Affiliation:

1. Department of Materials Science and Engineering, and Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea

2. Department of Physics, University of Ulsan, Ulsan 680-749, Korea

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/nn1021296

Reference25 articles.

1. Room-temperature transistor based on a single carbon nanotube

2. Logic Circuits with Carbon Nanotube Transistors

3. Carbon Nanotubes as Schottky Barrier Transistors

4. Identifying the Mechanism of Biosensing with Carbon Nanotube Transistors

5. Single- and multi-wall carbon nanotube field-effect transistors

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