Temperature-Induced Coexistence of a Conducting Bilayer and the Bulk-Terminated Surface of the Topological Insulator Bi2Te3-Reference-Cited by-同舟云学术

Temperature-Induced Coexistence of a Conducting Bilayer and the Bulk-Terminated Surface of the Topological Insulator Bi2Te3

Published:2013-08-21 Issue:9 Volume:13 Page:4517-4521
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Coelho Paula M.¹,Ribeiro Guilherme A. S.¹,Malachias Angelo¹,Pimentel Vinicius L.²,Silva Wendell S.¹,Reis Diogo D.¹,Mazzoni Mario S. C.¹,Magalhães-Paniago Rogerio¹

Affiliation:

1. Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG, CEP 30123-970, Brazil

2. Laboratório Nacional de Nanotecnologia, CP 6192, Campinas, SP, 13083-970, Brazil

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl402450b

Reference21 articles.

1. A topological Dirac insulator in a quantum spin Hall phase

2. Experimental Realization of a Three-Dimensional Topological Insulator, Bi 2 Te 3

3. Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States inBi2Te3andSb2Te3

4. Superconducting Proximity Effect and Majorana Fermions at the Surface of a Topological Insulator

5. Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3

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