Ion Gel-Gated Polymer Thin-Film Transistors: Operating Mechanism and Characterization of Gate Dielectric Capacitance, Switching Speed, and Stability-Reference-Cited by-同舟云学术

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Ion Gel-Gated Polymer Thin-Film Transistors: Operating Mechanism and Characterization of Gate Dielectric Capacitance, Switching Speed, and Stability

Published:2009-05-21 Issue:20 Volume:113 Page:8972-8981
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Lee Jiyoul,Kaake Loren G.,Cho Jeong Ho,Zhu X.-Y.,Lodge Timothy P.,Frisbie C. Daniel

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp901426e

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