Strain Effects in Ge/Si and Si/Ge Core/Shell Nanowires-Reference-Cited by-同舟云学术

Strain Effects in Ge/Si and Si/Ge Core/Shell Nanowires

Published:2011-07-22 Issue:32 Volume:115 Page:15739-15742
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Liu Nuo¹²,Lu Ning²,Yao Yong-Xin²,Li Yan-Rong¹,Wang Cai-Zhuang²,Ho Kai-Ming²

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

2. Ames Laboratory- U.S. Department of Energy and Department of Physics, Iowa State University, Ames, Iowa 50011, United States

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp110379n

Reference28 articles.

1. Ge/Si nanowire heterostructures as high-performance field-effect transistors

2. One-dimensional hole gas in germanium/silicon nanowire heterostructures

3. Structural and electronic properties of epitaxial core-shell nanowire heterostructures

4. Quantum size effect in core-shell structured silicon-germanium nanowires

5. Spatial Carrier Confinement in Core−Shell and Multishell Nanowire Heterostructures

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