Surface Recombination Velocity Measurements of Efficiently Passivated Gold-Catalyzed Silicon Nanowires by a New Optical Method-Reference-Cited by-同舟云学术

Surface Recombination Velocity Measurements of Efficiently Passivated Gold-Catalyzed Silicon Nanowires by a New Optical Method

Published:2010-05-26 Issue:7 Volume:10 Page:2323-2329
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Demichel O.¹,Calvo V.¹,Besson A.¹,Noé P.¹,Salem B.²,Pauc N.¹,Oehler F.¹,Gentile P.¹,Magnea N.¹

Affiliation:

1. Laboratoire Silicium Nanoélectronique Photonique et Structure, Service de Physique des Matériaux et Microstructures, Institut Nanosciences et Cryogénie, Commissariat à l Energie Atomique, 17 rue des Martyrs, F-38054 Grenoble Cedex, France

2. Laboratoire des Technologies de la Microélectronique, UMR-5129, CNRS-CEA, 17 rue des Martyrs, F-38054 Grenoble Cedex, France

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl903166t

Reference28 articles.

1. Study of the Filamentary Growth of Silicon Crystals from the Vapor

2. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

3. Silicon Nanowires: Preparation, Device Fabrication, and Transport Properties

4. A Laser Ablation Method for the Synthesis of Crystalline Semiconductor Nanowires

5. General Synthesis of Compound Semiconductor Nanowires

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