Theoretical Investigation of the Reaction Pathway of O Atom on Si(001)-(2 × 1)-Reference-Cited by-同舟云学术

Theoretical Investigation of the Reaction Pathway of O Atom on Si(001)-(2 × 1)

Published:2010-08-30 Issue:37 Volume:114 Page:15671-15677
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Ohno Shin-ya¹,Shudo Ken-ichi¹,Tanaka Masatoshi¹,Maeda Satoshi¹,Ohno Koichi¹

Affiliation:

1. Department of Physics, Graduate School of Engineering, Yokohama National University, Tokiwadai 79-5, Hodogaya-ku, Yokohama 240-8501, Japan, Department of Chemistry, Graduate School of Science, Tohoku University, Aramaki, Aoba-ku, Sendai 980-8578, Japan, and Toyota Physical and Chemical Research Institute, Nagakute, Aichi 480-1192, Japan

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp102883c

Reference42 articles.

1. Fundamental Aspects of Silicon Oxidation

2. Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

3. Influence of SiO2matrix on electronic and optical properties of Si nanocrystals

4. Selective oxidation with dioxygen by gold nanoparticle catalysts derived from 55-atom clusters

5. Scanning-tunneling-microscopy images of oxygen adsorption on the Si(001) surface

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