Surface Passivation of Efficient Nanotextured Black Silicon Solar Cells Using Thermal Atomic Layer Deposition-Reference-Cited by-同舟云学术

Surface Passivation of Efficient Nanotextured Black Silicon Solar Cells Using Thermal Atomic Layer Deposition

Published:2013-09-30 Issue:19 Volume:5 Page:9752-9759
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wang Wei-Cheng¹,Lin Che-Wei¹,Chen Hsin-Jui¹,Chang Che-Wei¹,Huang Jhih-Jie¹,Yang Ming-Jui²,Tjahjono Budi²,Huang Jian-Jia³,Hsu Wen-Ching³,Chen Miin-Jang¹⁴

Affiliation:

1. Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan

2. Sunrise Global Solar Energy Co., Ltd., Yilan 268, Taiwan

3. Sino-American Silicon Products Inc., Hsinchu Science Park 30075, Taiwan

4. Taiwan National Nano Device Laboratories, Hsinchu 30078, Taiwan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am402889k

Reference39 articles.

1. 19.8% efficient “honeycomb” textured multicrystalline and 24.4% monocrystalline silicon solar cells

2. Surface texturing of large area multicrystalline silicon solar cells using reactive ion etching method

3. Extremely low surface recombination velocities in black silicon passivated by atomic layer deposition

4. The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control

5. Improved broadband and quasi-omnidirectional anti-reflection properties with biomimetic silicon nanostructures

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