Atomic Layer Deposition of Lanthanum Stabilized Amorphous Hafnium Oxide Thin Films
Author:
Affiliation:
1. Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cm9001064
Reference36 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. International Technology Roadmap for Semiconductors, seewww.itrs.net.
3. Characteristics of hafnium oxide grown on silicon by atomic-layer deposition using tetrakis(ethylmethylamino)hafnium and water vapor as precursors
4. Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
5. Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]
Cited by 42 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Atomic and Molecular Layer Deposition of Functional Thin Films Based on Rare Earth Elements;Advanced Materials Interfaces;2024-08-23
2. Thermal Transport Mechanism of Amorphous HfO2: A Molecular Dynamics Based Study;Journal of Thermal Science;2022-06-17
3. MOx materials by ALD method;Metal Oxides for Non-volatile Memory;2022
4. Structural Modifications in Amorphous Oxide Nanolaminates with Annealing;Optical Interference Coatings Conference (OIC) 2022;2022
5. Defect Engineering of Nanoscale Hf-Based Metal–Organic Frameworks for Highly Efficient Iodine Capture;Inorganic Chemistry;2021-06-16
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3