First-Principles Investigation of Anistropic Hole Mobilities in Organic Semiconductors-Reference-Cited by-同舟云学术

First-Principles Investigation of Anistropic Hole Mobilities in Organic Semiconductors

Published:2009-06-09 Issue:26 Volume:113 Page:8813-8819
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Wen Shu-Hao¹,Li An¹,Song Junling¹,Deng Wei-Qiao¹,Han Ke-Li¹,Goddard William A.¹

Affiliation:

1. Division of Chemistry and Biological Chemistry, School of Physical and Mathematical Sciences, Nanyang Technological University, 637616 Singapore, State Key Laboratory of Molecular Reaction Dynamics, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, People’s Republic of China, and Materials and Process Simulation Center, California Institute of Technology, Pasadena, California 91125

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp900512s

Reference48 articles.

1. Toward Paperlike Displays

2. The path to ubiquitous and low-cost organic electronic appliances on plastic

3. Patterning organic single-crystal transistor arrays

4. Charge carrier transport in organic semiconductors

5. Charge Transport in Organic Semiconductors

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