Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS2, WS2, and Their Bilayer Heterostructures-Reference-Cited by-同舟云学术

Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS2, WS2, and Their Bilayer Heterostructures

Published:2014-08-19 Issue:9 Volume:14 Page:5097-5103
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Liu Kai¹,Yan Qimin²,Chen Michelle¹,Fan Wen¹³,Sun Yinghui²,Suh Joonki¹,Fu Deyi¹,Lee Sangwook¹,Zhou Jian¹,Tongay Sefaattin¹,Ji Jie³,Neaton Jeffrey B.²⁴,Wu Junqiao¹

Affiliation:

1. Department of Materials Science and Engineering, University of California, Berkeley, California 94720, United States

2. Department of Physics, University of California, Berkeley, California 94720, United States

3. Department of Thermal Science and Energy Engineering, University of Science and Technology of China, Anhui 230027, China

4. Kavli Energy Nanosciences Institute, University of California, Berkeley, California 94720, United States

Funder

Division of Electrical, Communications and Cyber Systems

Basic Energy Sciences

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl501793a

Reference44 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

3. Atomically ThinMoS2: A New Direct-Gap Semiconductor

4. Emerging Photoluminescence in Monolayer MoS2

5. Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

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