Determination of the Absolute Thickness of Ultrathin Al2O3 Overlayers on Si (100) Substrate
Author:
Publisher
American Chemical Society (ACS)
Subject
Analytical Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/ac901463m
Reference18 articles.
1. International Technology Roadmap for Semiconductors, 2007.
2. Electrical properties of high-κ gate dielectrics: Challenges, current issues, and possible solutions
3. Thermodynamic stability of binary oxides in contact with silicon
4. Band offsets of wide-band-gap oxides and implications for future electronic devices
5. Reliability properties of metal-oxide-semiconductor capacitors using HfO2 high-κ dielectric
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