Room Temperature Instability of E′γ Centers Induced by γ Irradiation in Amorphous SiO2-Reference-Cited by-同舟云学术

Room Temperature Instability of E′γ Centers Induced by γ Irradiation in Amorphous SiO2

Published:2008-12-29 Issue:6 Volume:113 Page:1026-1032
ISSN:1089-5639
Container-title:The Journal of Physical Chemistry A
language:en
Short-container-title:J. Phys. Chem. A

Author:

Messina F.¹,Agnello S.¹,Cannas M.¹,Parlato A.¹

Affiliation:

1. Dipartimento di Scienze Fisiche ed Astronomiche, Università di Palermo, Via Archirafi 36, and Dipartimento di Ingegneria Nucleare, Università di Palermo, Viale delle Scienze, Building 6, 90128 Palermo, Italy

Publisher

American Chemical Society (ACS)

Subject

Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp8054813

Reference50 articles.

1. Pacchioni, G., Skuja, L., Griscom, D. L., Eds.Defects in SiO2and Related Dielectrics: Science and Technology;Kluwer Academic Publishers:Hingham, MA,2000.

2. Thermal bleaching of x-ray-induced defect centers in high purity fused silica by diffusion of radiolytic molecular hydrogen

3. Hydrogen anneal of E′ centers in thermal SiO2 on Si

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