Threshold Pressure for Disappearance of Size-Induced Effect in Spinel-Structure Ge3N4 Nanocrystals-Reference-Cited by-同舟云学术

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Threshold Pressure for Disappearance of Size-Induced Effect in Spinel-Structure Ge3N4 Nanocrystals

Published:2003-12-01 Issue:51 Volume:107 Page:14151-14153
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Wang Zhongwu¹,Zhao Yusheng¹,Schiferl D.¹,Qian Jiang¹,Downs Robert T.²,Mao Ho-Kwang³,Sekine T.⁴

Affiliation:

1. Los Alamos National Laboratory, Los Alamos, New Mexico 87545

2. Department of Geosciences, University of Arizona, Tucson, Arizona 85721

3. Geophysical Laboratory, Carnegie Institute of Washington, Washington, DC 20015

4. National Institute for Materials Science (NIMS), Namki, Tsukuba, Ibaraki, Japan

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp036436t

Reference19 articles.

1. From Molecules to Materials: Current Trends and Future Directions

2. Size Dependence of Structural Metastability in Semiconductor Nanocrystals

3. High-Pressure Structural Transformations in Semiconductor Nanocrystals

4. Wang, Z. W.; Saxena, S. K.; Pischedda, V.; Liermann, H. P.; Zha, C. S.J.Phys: Condens. Matter2001,13, 8317.

5. Enhanced bulk modulus and reduced transition pressure in γ-Fe 2 O 3 nanocrystals

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