Exciton Kinetics, Quantum Efficiency, and Efficiency Droop of Monolayer MoS2 Light-Emitting Devices
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal, Quebec H3A 0E9, Canada
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl5017283
Reference37 articles.
1. Emerging Photoluminescence in Monolayer MoS2
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3. Atomically ThinMoS2: A New Direct-Gap Semiconductor
4. Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors
5. Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
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