Polyamorphic Amorphous Silicon at High Pressure: Raman and Spatially Resolved X-ray Scattering and Molecular Dynamics Studies-Reference-Cited by-同舟云学术

Polyamorphic Amorphous Silicon at High Pressure: Raman and Spatially Resolved X-ray Scattering and Molecular Dynamics Studies

Published:2011-08-17 Issue:48 Volume:115 Page:14246-14255
ISSN:1520-6106
Container-title:The Journal of Physical Chemistry B
language:en
Short-container-title:J. Phys. Chem. B

Author:

Daisenberger Dominik¹,Deschamps Thierry²,Champagnon Bernard²,Mezouar Mohamed³,Quesada Cabrera Raúl¹,Wilson Mark⁴,McMillan Paul F.¹

Affiliation:

1. Department of Chemistry and Materials Chemistry Centre, Christopher Ingold Laboratory, University College London, 20 Gordon Street, London WC1H 0AJ, United Kingdom

2. Laboratoire de Physico-Chimie des Matériaux Luminescents, Université Claude Bernard Lyon 1, UMR 5620 CNRS, Université de Lyon, 12 rue Ada Byron, 69622 Villeurbanne cedex, France

3. European Synchrotron Radiation Facility, BP 220, F-38043, Grenoble, France

4. Department of Chemistry, Physical and Theoretical Chemistry Laboratory, University of Oxford, South Parks Road, Oxford OX1 3QZ

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,Surfaces, Coatings and Films,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/jp205090s

Reference76 articles.

1. High Resolution Radial Distribution Function of Pure Amorphous Silicon

2. Thermal Conductivity and Specific Heat of Thin-Film Amorphous Silicon

3. Thermal Conductivity and Specific Heat of Noncrystalline Solids