In-Plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates-Reference-Cited by-同舟云学术

In-Plane Epitaxial Growth of Silicon Nanowires and Junction Formation on Si(100) Substrates

Published:2014-10-30 Issue:11 Volume:14 Page:6469-6474
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Yu Linwei¹²,Xu Mingkun¹,Xu Jie¹,Xue Zhaoguo¹,Fan Zheng²,Picardi Gennaro²,Fortuna Franck³,Wang Junzhuan¹,Xu Jun¹,Shi Yi¹,Chen Kunji¹,Roca i Cabarrocas Pere²

Affiliation:

1. School of Electronics Science and Engineering/Collaborative Innovation Center of Advanced Microstructures, Nanjing University, 210093, Nanjing, China

2. LPICM, CNRS/École Polytechnique (UMR 7642), 91128 Palaiseau, France

3. CSNSM, Université Paris-Sud, Bâtiment 108, 91405 Orsay Campus, France

Funder

Ministry of Science and Technology of the People's Republic of China

National Natural Science Foundation of China

Total

Natural Science Foundation of Jiangsu Province

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

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