Anisotropy in Hydrogen-Passivated and Organically Modified Nanoporous Silicon Surfaces Studied by Polarization Dependent IR Spectroscopy-Reference-Cited by-同舟云学术

Anisotropy in Hydrogen-Passivated and Organically Modified Nanoporous Silicon Surfaces Studied by Polarization Dependent IR Spectroscopy

Published:2009-01-07 Issue:3 Volume:25 Page:1445-1452
ISSN:0743-7463
Container-title:Langmuir
language:en
Short-container-title:Langmuir

Author:

Roodenko K.¹,Rappich J.¹,Yang F.¹,Zhang X.¹,Esser N.¹,Hinrichs K.¹

Affiliation:

1. ISAS - Institute for Analytical Sciences, Dept. Berlin, Albert-Einstein-Str. 9, 12489 Berlin, Germany, Helmholtz Zentrum Berlin für Materialien and Energie GmbH, Abteilung Silizium-Photovoltaik, Kekuléstrasse 5, 12489 Berlin, Germany, and Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080

Publisher

American Chemical Society (ACS)

Subject

Electrochemistry,Spectroscopy,Surfaces and Interfaces,Condensed Matter Physics,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/la802685m

Reference66 articles.

1. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers

2. Chemical and Biological Applications of Porous Silicon Technology

3. Formation and application of porous silicon

4. DNA hybridization detection by porous silicon-based DNA microarray in conjugation with infrared microspectroscopy

5. The Physics of Macropore Formation in Low‐Doped p‐Type Silicon

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