Trans−Cis Isomerization and Structure of [R2Ga(μ-NHSiEt3)]2 (R = Me, Et)-Reference-Cited by-同舟云学术

Trans−Cis Isomerization and Structure of [R2Ga(μ-NHSiEt3)]2 (R = Me, Et)

Published:1999-06-01 Issue:13 Volume:18 Page:2513-2518
ISSN:0276-7333
Container-title:Organometallics
language:en
Short-container-title:Organometallics

Author:

Bae Byoung-Jae¹,Park Jae E.¹,Kim Younsoo¹,Park Joon T.¹,Suh Il-Hwan¹

Affiliation:

1. Department of Chemistry and Center for Molecular Science, Korea Advanced Institute of Science and Technology, Taejon 305-701, Korea, and Department of Physics, Chungnam National University, Taejon 305-701, Korea

Publisher

American Chemical Society (ACS)

Subject

Inorganic Chemistry,Organic Chemistry,Physical and Theoretical Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/om9901325

Reference53 articles.

1. CVD of Compound Semiconductors

2. Growth of GaN Thin‐Films from Triethylgallium Monamine

3. Chemical vapor deposition of gallium nitride from diethylgallium azide

4. New Single-Source Precursor Approach to Gallium Nitride

5. GaN Film Growth Using Single-Source Precursors

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