Origin of the Accumulation Layer at the InN/a-In2O3 Interface-Reference-Cited by-同舟云学术

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Origin of the Accumulation Layer at the InN/a-In2O3 Interface

Published:2015-02-26 Issue:9 Volume:7 Page:5415-5419
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Aliano Antonio¹,Cicero Giancarlo¹²,Catellani Alessandra²³

Affiliation:

1. Department of Applied Science and Technology, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino, Italy

2. CNR-IMEM, Parco Area delle Scienze, 37A, I-43010 Parma, Italy

3. CNR-NANO, Istituto Nanoscienze, Centro S3, I-41125 Modena, Italy

Funder

European Commission

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am508944s

Reference29 articles.

1. When group-III nitrides go infrared: New properties and perspectives

2. Transparent Conducting Oxides for Photovoltaics: Manipulation of Fermi Level, Work Function and Energy Band Alignment

3. Indium oxide nanostructures

4. Nitride and oxide semiconductor nanostructured hydrogen gas sensors

5. Electrical Conductivity of InN Nanowires and the Influence of the Native Indium Oxide Formed at Their Surface

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1. Uncovering the Interfacial Strengthening Mechanisms of α-Mg/Mg₂Sn/β-Li Interfaces Using First-Principle Calculations and HAADF-STEM;ACS Applied Materials & Interfaces;2024-08-01

2. Photovoltaic Photodetectors Based on In₂O₃/InN Core–Shell Nanorods;ACS Applied Nano Materials;2022-05-12

3. Influence of galvanic interaction between chalcopyrite and galena on electrochemical and flotation behaviour of chalcopyrite;Applied Surface Science;2022-01

4. Preparation of InN-In₂O₃ Nanocomposite with Bottle-shaped Structure and Its Enhanced Formaldehyde Gas Sensitivity;CHEM J CHINESE U;2020

5. Hydrogenation-produced In2O3/InN core–shell nanorod and its effect on NO2 gas sensing behavior;Nanotechnology;2020-06-02

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