Large Reduction of Hot Spot Temperature in Graphene Electronic Devices with Heat-Spreading Hexagonal Boron Nitride
Author:
Affiliation:
1. Ming Hsieh Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, United States
2. National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
Funder
Ministry of Education, Culture, Sports, Science and Technology
Basic Energy Sciences
Japan Society for the Promotion of Science
National Science Foundation
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.7b16634
Reference41 articles.
1. Ultrahigh electron mobility in suspended graphene
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4. Thermal Transport in Suspended and Supported Monolayer Graphene Grown by Chemical Vapor Deposition
5. Two-Dimensional Phonon Transport in Supported Graphene
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