Analyzing the n-Doping Mechanism of an Air-Stable Small-Molecule Precursor-Reference-Cited by-同舟云学术

Analyzing the n-Doping Mechanism of an Air-Stable Small-Molecule Precursor

Published:2017-12-20 Issue:1 Volume:10 Page:1340-1346
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Schwarze Martin^ORCID,Naab Benjamin D.¹,Tietze Max L.^ORCID,Scholz Reinhard,Pahner Paul,Bussolotti Fabio²,Kera Satoshi²,Kasemann Daniel,Bao Zhenan¹^ORCID,Leo Karl

Affiliation:

1. Department of Chemical Engineering, Stanford University, Stanford, California 94303, United States

2. Department of Photo-Molecular Science, Institute for Molecular Science, Myodaiji, Okazaki, Aichi 444-8585, Japan

Funder

Deutsche Forschungsgemeinschaft

Canadian Institute for Advanced Research

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b14034

Reference38 articles.

1. White organic light-emitting diodes with fluorescent tube efficiency

2. Highly efficient organic multi-junction solar cells with a thiophene based donor material

3. Highly Efficient Organic Devices Based on Electrically Doped Transport Layers

4. Doping of organic semiconductors

5. Closed-Shell Molecules That Ionize More Readily Than Cesium

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