Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition-Reference-Cited by-同舟云学术

Magnetic Properties of CoFe2O4 Thin Films Synthesized by Radical-Enhanced Atomic Layer Deposition

Published:2017-10-16 Issue:42 Volume:9 Page:36980-36988
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Pham Calvin D.¹,Chang Jeffrey¹^ORCID,Zurbuchen Mark A.¹,Chang Jane P.¹

Affiliation:

1. Department of Chemical and Biomolecular Engineering and ‡Department of Electrical Engineering, University of California, Los Angeles (UCLA), Los Angeles, California 90095, United States

Funder

Defense Advanced Research Projects Agency

Microelectronics Advanced Research Corporation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b08097

Reference44 articles.

1. Enhancement of voltage-controlled magnetic anisotropy through precise control of Mg insertion thickness at CoFeB|MgO interface

2. Reduction of switching current density in perpendicular magnetic tunnel junctions by tuning the anisotropy of the CoFeB free layer

3. Tailoring exchange couplings in magnetic topological-insulator/antiferromagnet heterostructures

4. Deterministic switching of ferromagnetism at room temperature using an electric field

5. Probing electric field control of magnetism using ferromagnetic resonance

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