Transport Across Heterointerfaces of Amorphous Niobium Oxide and Crystallographically Oriented Epitaxial Germanium-Reference-Cited by-同舟云学术

Transport Across Heterointerfaces of Amorphous Niobium Oxide and Crystallographically Oriented Epitaxial Germanium

Published:2017-11-30 Issue:49 Volume:9 Page:43315-43324
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Hudait Mantu K.¹^ORCID,Clavel Michael¹^ORCID,Liu Jheng-Sin¹,Ghosh Aheli¹,Jain Nikhil¹,Bodnar Robert J.¹

Affiliation:

1. Advanced Devices & Sustainable Energy Laboratory (ADSEL), Bradley Department of Electrical and Computer Engineering and ‡Fluids Research Laboratory, Department of Geosciences, Virginia Tech, Blacksburg, Virginia 24061, United States

Funder

Division of Electrical, Communications and Cyber Systems

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b06601

Reference64 articles.

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3. NbO as gate electrode for n-channel metal-oxide-semiconductor field-effect-transistors

4. Mott Memory and Neuromorphic Devices

5. Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb/sub 2/O/sub 5/) with HfO/sub 2//Al/sub 2/O/sub 3/ barriers

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