Rectifying Characteristics and Semiconductor–Metal Transition Induced by Interfacial Potential in the Mn3CuN/n-Si Intermetallic Heterojunction-Reference-Cited by-同舟云学术

Rectifying Characteristics and Semiconductor–Metal Transition Induced by Interfacial Potential in the Mn3CuN/n-Si Intermetallic Heterojunction

Published:2017-03-28 Issue:14 Volume:9 Page:12592-12600
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Shi Kewen¹,Wang Cong¹,Sun Ying¹,Wang Lei¹^ORCID,Deng Sihao¹,Hu Pengwei¹,Lu Huiqing¹,Hao Weichang¹,Wang Tianmin¹,Tang Weihua²^ORCID

Affiliation:

1. Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University, Beijing 100191, People’s Republic of China

2. State Key Laboratory of Information Photonics and Optical Telecommunications, School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, People’s Republic of China

Funder

National Natural Science Foundation of China

Academic Excellence Foundation of BUAA for PhD Students

Fundamental Research Funds for the Central Universities

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b00700

Reference52 articles.

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4. Quantum functional devices: resonant-tunneling transistors, circuits with reduced complexity, and multiple valued logic

5. Fully Porous GaN p–n Junction Diodes Fabricated by Chemical Vapor Deposition

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