Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors-Reference-Cited by-同舟云学术

Rough Electrode Creates Excess Capacitance in Thin-Film Capacitors

Published:2017-08-07 Issue:32 Volume:9 Page:27290-27297
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Torabi Solmaz¹^ORCID,Cherry Megan¹,Duijnstee Elisabeth A.¹,Le Corre Vincent M.¹,Qiu Li¹²,Hummelen Jan C.¹²,Palasantzas George¹,Koster L. Jan Anton¹^ORCID

Affiliation:

1. Zernike Institute for Advanced Materials, Nijenborgh 4, 9747 AG Groningen, The Netherlands

2. Stratingh Institute for Chemistry, Nijenborgh 4, 9747 AG Groningen, The Netherlands

Funder

Stichting voor Fundamenteel Onderzoek der Materie

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

http://pubs.acs.org/doi/pdf/10.1021/acsami.7b06451

Reference47 articles.

1. Alternative dielectrics to silicon dioxide for memory and logic devices

2. Enhancement of the dielectric constant of Ta2O5through substitution with TiO2

3. Polymer-Based Dielectrics with High Energy Storage Density

4. High field tunneling as a limiting factor of maximum energy density in dielectric energy storage capacitors

5. Novel polymer-ceramic nanocomposite based on high dielectric constant epoxy formula for embedded capacitor application

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