Complete Separation of Carriers in the GeS/SnS Lateral Heterostructure by Uniaxial Tensile Strain-Reference-Cited by-同舟云学术

Complete Separation of Carriers in the GeS/SnS Lateral Heterostructure by Uniaxial Tensile Strain

Published:2017-11-07 Issue:46 Volume:9 Page:40969-40977
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Peng Lei¹,Wang Chan¹,Qian Qi¹,Bi Cheng¹,Wang Sufan¹,Huang Yucheng¹^ORCID

Affiliation:

1. Center for Nano Science and Technology, College of Chemistry and Material Science, The Key Laboratory of Functional Molecular Solids, Ministry of Education, Anhui Laboratory of Molecule-Based Materials, Anhui Normal University, Wuhu 241000, People’s Republic of China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b11613

Reference54 articles.

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2. Integrated Circuits Based on Bilayer MoS2 Transistors

3. Electronics based on two-dimensional materials

4. Synthesis of Few-Layer Hexagonal Boron Nitride Thin Film by Chemical Vapor Deposition

5. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

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