Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures-Reference-Cited by-同舟云学术

Efficient Nitrogen Doping of Single-Layer Graphene Accompanied by Negligible Defect Generation for Integration into Hybrid Semiconductor Heterostructures

Published:2017-03-10 Issue:11 Volume:9 Page:10003-10011
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Sarau George¹²,Heilmann Martin²,Bashouti Muhammad²³,Latzel Michael²⁴,Tessarek Christian¹²,Christiansen Silke¹²⁵^ORCID

Affiliation:

1. Helmholtz-Zentrum Berlin für Materialien und Energie, Hahn-Meitner Platz 1, 14109 Berlin, Germany

2. Max Planck Institute for the Science of Light, Staudtstrasse 2, 91058 Erlangen, Germany

3. Jacob Blaustein Institutes for Desert Research, Sede Boqer Campus, Ben-Gurion University of the Negev, 8499000 Sede Boqer, Israel

4. Institute of Optics, Information and Photonics, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Staudtstrasse 7/B2, 91058 Erlangen, Germany

5. Physics Department, Freie Universität Berlin, Arnimallee 14, 14195 Berlin, Germany

Funder

Deutsche Forschungsgemeinschaft

Friedrich-Alexander-Universit?t Erlangen-N?rnberg

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b00067

Reference61 articles.

1. Heteroatom-doped graphene materials: syntheses, properties and applications