Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters-Reference-Cited by-同舟云学术

Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters

Published:2017-04-26 Issue:18 Volume:9 Page:15592-15598
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Han Sol¹,Choi Kyunghee²,Kim Jin Sung¹,Yu Sanghyuck¹,Ko Kyeong Rok¹,Im Seongil¹^ORCID

Affiliation:

1. Institute of Physics and Applied Physics, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749, South Korea

2. ICT Materials & Components Research Laboratory, Electronics and Telecommunications Research Institute(ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon, 34129, Republic of Korea

Funder

National Research Foundation of Korea

Ministry of Trade, Industry and Energy

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b02838

Reference39 articles.

1. Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene

2. Two-dimensional van der Waals nanosheet devices for future electronics and photonics

3. Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids

4. Van der Waals heterostructures

5. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

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