Room-Temperature Synthesis of GaN Driven by Kinetic Energy beyond the Limit of Thermodynamics-Reference-Cited by-同舟云学术

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Room-Temperature Synthesis of GaN Driven by Kinetic Energy beyond the Limit of Thermodynamics

Published:2017-11-17 Issue:48 Volume:9 Page:41629-41633
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Imaoka Takane¹,Okada Takeru,Samukawa Seiji,Yamamoto Kimihisa¹^ORCID

Affiliation:

1. Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, Yokohama 225-8503, Japan

Funder

New Energy and Industrial Technology Development Organization

Exploratory Research for Advanced Technology

Core Research for Evolutional Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.7b13694

Reference33 articles.

1. P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)

2. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

3. Structural, electronic, and magnetic properties ofFe16N2

4. Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting

5. Visible-Light Photocatalysis in Nitrogen-Doped Titanium Oxides

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3. Type-I/Type-II Transition of MoSe2/g-GaN van der Waals heterostructures mediated by biaxial strain and electric field for overall water splitting;Materials Science and Engineering: B;2023-02

4. Bulk photovoltaic effect in GaNGeC quaternary compound semiconductors;Physical Chemistry Chemical Physics;2022

5. Type-I/Type-Ii Transition of Mose2/G-Gan Van Der Waals Heterostructures Mediated by Biaxial Strain And Electric Field for Overall Water Splitting;SSRN Electronic Journal;2022

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